Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
Transistor Type |
7 NPN Darlington |
Current - Collector (Ic) (Max) |
500mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Vce Saturation (Max) @ Ib, Ic |
1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) |
50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 350mA, 2V |
Power - Max |
1.47W |
Frequency - Transition |
- |
Operating Temperature |
-40°C ~ 85°C (TA) |
Mounting Type |
Through Hole |
Package / Case |
16-DIP (0.300", 7.62mm) |
Supplier Device Package |
16-DIP |
Base Product Number |
ULN2004 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0075 |
Standard Package |
25 |
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.47W Through Hole 16-DIP