Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Transistor Type |
NPN |
Voltage - Collector Emitter Breakdown (Max) |
5.3V |
Frequency - Transition |
12.5GHz |
Noise Figure (dB Typ @ f) |
1.45dB @ 1GHz |
Gain |
11.8dB |
Power - Max |
800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 30mA, 5V |
Current - Collector (Ic) (Max) |
100mA |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
S-Mini |
Base Product Number |
MT3S113 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
3,000 |
RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini