Toshiba Semiconductor and Storage MT3S113(TE85L,F) - Toshiba Semiconductor and Storage Bipolar (BJT) - BOM, Chip Distributor, Quick Quotation 365day Warranty
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Toshiba Semiconductor and Storage MT3S113(TE85L,F)

MT3S113(TE85L,F)

  • Manufacturer: Toshiba Semiconductor and Storage
  • Manufacturer's number: Toshiba Semiconductor and Storage MT3S113(TE85L,F)
  • Package: Tape & Reel (TR)
  • Datasheet: PDF
  • Stock: 2
  • SKU: MT3S113(TE85L,F)
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.7000

Ext Price: $0.7000

Details

Tags

Parameters
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel (TR)
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 5.3V
Frequency - Transition 12.5GHz
Noise Figure (dB Typ @ f) 1.45dB @ 1GHz
Gain 11.8dB
Power - Max 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
Current - Collector (Ic) (Max) 100mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Base Product Number MT3S113
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000
RF Transistor NPN 5.3V 100mA 12.5GHz 800mW Surface Mount S-Mini