Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
200 mA |
Voltage - Collector Emitter Breakdown (Max) |
500 V |
Vce Saturation (Max) @ Ib, Ic |
1.4V @ 5mA, 25mA |
Current - Collector Cutoff (Max) |
10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 25mA, 10V |
Power - Max |
1 W |
Frequency - Transition |
- |
Operating Temperature |
-65°C ~ 200°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-205AA, TO-5-3 Metal Can |
Supplier Device Package |
TO-5AA |
Base Product Number |
2N5010 |
RoHS Status |
RoHS non-compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 500 V 200 mA 1 W Through Hole TO-5AA