Microsemi Corporation 2N6251T1
2N6251T1
- Manufacturer: Microsemi Corporation
- Manufacturer's number: Microsemi Corporation 2N6251T1
- Package: Bulk
- Datasheet: PDF
- Stock: 2952
- SKU: 2N6251T1
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | Microsemi Corporation |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1.67A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 10A, 3V |
| Power - Max | 6 W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C |
| Mounting Type | Through Hole |
| Package / Case | TO-254-3, TO-254AA |
| Supplier Device Package | TO-254AA |
| Base Product Number | 2N6251 |
| RoHS Status | RoHS non-compliant |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1 |
Bipolar (BJT) Transistor NPN 350 V 10 A 6 W Through Hole TO-254AA