Toshiba Semiconductor and Storage SSM6K217FE,LF

SSM6K217FE,LF

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM6K217FE,LF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 37
SKU: SSM6K217FE,LF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Rds On (Max) @ Id, Vgs	195mOhm @ 1A, 8V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.1 nC @ 4.2 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	ES6
Package / Case	SOT-563, SOT-666
Base Product Number	SSM6K217
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	4,000

N-Channel 40 V 1.8A (Ta) 500mW (Ta) Surface Mount ES6