Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
U-MOSVII |
Package |
Tape & Reel (TR) |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
21A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
5.8mOhm @ 10.5A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs |
16 nC @ 5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
1860 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1.9W (Ta), 30W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-TSON Advance (3.1x3.1) |
Package / Case |
8-PowerVDFN |
Base Product Number |
TPCC8093 |
RoHS Status |
RoHS Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
TPCC8093L1Q |
Standard Package |
5,000 |
N-Channel 20 V 21A (Ta) 1.9W (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)