Toshiba Semiconductor and Storage TRS20N65FB,S1F(S

TRS20N65FB,S1F(S

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TRS20N65FB,S1F(S
Package: Tube
Datasheet: -
Stock: 3328
SKU: TRS20N65FB,S1F(S
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to RFQ list

Details

Parameters
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io) (per Diode)	10A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	90 µA @ 650 V
Operating Temperature - Junction	175°C (Max)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Base Product Number	TRS20N65
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	TRS20N65FBS1F(S
Standard Package	30
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube

Diode Array 1 Pair Common Cathode 650 V 10A (DC) Through Hole TO-247-3