Parameters |
Mfr |
Wolfspeed, Inc. |
Series |
- |
Package |
Box |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
630A (Tc) |
Rds On (Max) @ Id, Vgs |
3.47mOhm @ 530A, 15V |
Vgs(th) (Max) @ Id |
3.6V @ 127mA |
Gate Charge (Qg) (Max) @ Vgs |
1362nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
38900pF @ 800V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
WAS530 |
Moisture Sensitivity Level (MSL) |
Not Applicable |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 1200V (1.2kV) 630A (Tc) Chassis Mount