Parameters |
Mfr |
Wolfspeed, Inc. |
Series |
- |
Package |
Box |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
4 N-Channel (Full Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
50A (Tj) |
Rds On (Max) @ Id, Vgs |
28.9mOhm @ 30A, 15V |
Vgs(th) (Max) @ Id |
3.9V @ 17mA |
Gate Charge (Qg) (Max) @ Vgs |
162nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
5400pF @ 1000V |
Power - Max |
10mW |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
CBB021 |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Other Names |
1697-CBB021M12FM3T |
Standard Package |
18 |
Mosfet Array 1200V (1.2kV) 50A (Tj) 10mW Chassis Mount