Parameters |
Mfr |
Wolfspeed, Inc. |
Series |
- |
Package |
Box |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
200A (Tj) |
Rds On (Max) @ Id, Vgs |
6.9mOhm @ 200A, 15V |
Vgs(th) (Max) @ Id |
3.6V @ 69mA |
Gate Charge (Qg) (Max) @ Vgs |
708nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
20400pF @ 800V |
Power - Max |
10mW |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
CAB006 |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Other Names |
1697-CAB006A12GM3T |
Standard Package |
18 |
Mosfet Array 1200V 200A (Tj) 10mW Chassis Mount Module