Parameters |
Mfr |
Wolfspeed, Inc. |
Series |
- |
Package |
Tray |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
200A (Tj) |
Rds On (Max) @ Id, Vgs |
6.9mOhm @ 200A, 15V |
Vgs(th) (Max) @ Id |
3.6V @ 69mA |
Gate Charge (Qg) (Max) @ Vgs |
708nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
20400pF @ 800V |
Power - Max |
10mW (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
CAB006 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
18 |
Mosfet Array 1200V (1.2kV) 200A (Tj) 10mW (Tc) Chassis Mount