| Parameters |
| Mfr |
Wolfspeed, Inc. |
| Series |
C3M™ |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
66A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
53.5mOhm @ 33.3A, 15V |
| Vgs(th) (Max) @ Id |
3.6V @ 9.5mA |
| Gate Charge (Qg) (Max) @ Vgs |
101 nC @ 15 V |
| Vgs (Max) |
+15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds |
2900 pF @ 1000 V |
| FET Feature |
- |
| Power Dissipation (Max) |
326W (Tc) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-3 |
| Package / Case |
TO-247-3 |
| Base Product Number |
C3M0040120 |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
30 |
N-Channel 1200 V 66A (Tc) 326W (Tc) Through Hole TO-247-3