Parameters |
Mfr |
WeEn Semiconductors |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
24A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
196mOhm @ 10A, 20V |
Vgs(th) (Max) @ Id |
4.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
35 nC @ 20 V |
Vgs (Max) |
+25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
736 pF @ 1000 V |
FET Feature |
- |
Power Dissipation (Max) |
155W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-3 |
Package / Case |
TO-247-3 |
Base Product Number |
WNSCM160120 |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
600 |
N-Channel 1200 V 24A (Ta) 155W (Ta) Through Hole TO-247-3