Vishay Siliconix SUM90100E-GE3

N-CHANNEL 200-V (D-S) MOSFET D2P

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SUM90100E-GE3
Package: Bulk
Datasheet: PDF
Stock: 1562
SKU: SUM90100E-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	11.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3930 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D²Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SUM90100E-GE3
Standard Package	800

N-Channel 200 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)