Vishay Siliconix SIZF906BDT-T1-GE3

DUAL N-CHANNEL 30 V (D-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIZF906BDT-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 29
SKU: SIZF906BDT-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual), Schottky
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Rds On (Max) @ Id, Vgs	2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V, 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1630pF @ 15V, 5550pF @ 15V
Power - Max	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)
Base Product Number	SIZF906
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIZF906BDT-T1-GE3CT
Standard Package	3,000

Mosfet Array 30V 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Surface Mount 8-PowerPair® (6x5)