Vishay Siliconix SIZ998BDT-T1-GE3

DUAL N-CHANNEL 30-V (D-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIZ998BDT-T1-GE3
Package: Tape & Reel (TR)
Datasheet: -
Stock: 18
SKU: SIZ998BDT-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual), Schottky
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 15V, 2130pF @ 15V
Power - Max	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-PowerPair® (6x5)
Base Product Number	SIZ998
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIZ998BDT-T1-GE3TR
Standard Package	3,000

Mosfet Array 30V 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Surface Mount 8-PowerPair® (6x5)