Parameters |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® Gen IV |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
70V |
Current - Continuous Drain (Id) @ 25°C |
11.5A (Ta), 31.8A (Tc) |
Rds On (Max) @ Id, Vgs |
17.6mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
1060pF @ 35V |
Power - Max |
4.3W (Ta), 33W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-PowerWDFN |
Supplier Device Package |
8-PowerPair® (3.3x3.3) |
Base Product Number |
SIZ256 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
742-SIZ256DT-T1-GE3TR |
Standard Package |
3,000 |
Mosfet Array 70V 11.5A (Ta), 31.8A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair® (3.3x3.3)