Vishay Siliconix SIS590DN-T1-GE3

COMBO N- & P-CHANNEL 100 V (D-S)

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIS590DN-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 27
SKU: SIS590DN-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs	167mOhm @ 1.5A, 10V, 251mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual
Base Product Number	SIS590
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 100V 2.7A (Ta), 4A (Tc), 2.3A (Ta), 4A (Tc) 2.5W (Ta), 17.9W (Tc), 2.6W (Ta), 23.1W (Tc) Surface Mount PowerPAK® 1212-8 Dual