Vishay Siliconix SIRA90ADP-T1-GE3

MOSFET N-CH 30V 71A/334A PPAK

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIRA90ADP-T1-GE3
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 4339
SKU: SIRA90ADP-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Cut Tape (CT)
Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	71A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs	0.78mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	195 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	9120 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	6.3W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Base Product Number	SIRA90
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 30 V 71A (Ta), 334A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8