Vishay Siliconix SIJH112E-T1-GE3

MOSFET N-CH 100V 23A/225A PPAK

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIJH112E-T1-GE3
Package: Tape & Reel (TR)
Datasheet: -
Stock: 3
SKU: SIJH112E-T1-GE3
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Unit Price: $4.6000

Ext Price: $4.6000

Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	23A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8050 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN
Base Product Number	SIJH112
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIJH112E-T1-GE3TR
Standard Package	2,000

N-Channel 100 V 23A (Ta), 225A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8