Vishay Siliconix SIHB186N60EF-GE3

MOSFET N-CH 600V 8.4A D2PAK

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SIHB186N60EF-GE3
Package: Tube
Datasheet: PDF
Stock: 2
SKU: SIHB186N60EF-GE3
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $2.9600

Ext Price: $2.9600

Details

Parameters
Mfr	Vishay Siliconix
Series	EF
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	193mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1081 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	SIHB186
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-SIHB186N60EF-GE3
Standard Package	50

N-Channel 600 V 8.4A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)