Vishay Siliconix SI3442BDV-T1-BE3

N-CHANNEL 2.5-V (G-S) MOSFET

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI3442BDV-T1-BE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: SI3442BDV-T1-BE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	295 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	860mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Other Names	742-SI3442BDV-T1-BE3TR
Standard Package	3,000

N-Channel 20 V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP