Vishay Siliconix SI2392BDS-T1-GE3

N-CHANNEL 100-V (D-S) MOSFET SOT

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix SI2392BDS-T1-GE3
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 25
SKU: SI2392BDS-T1-GE3
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Details

Parameters
Mfr	Vishay Siliconix
Series	TrenchFET®
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A (Ta), 2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	52mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	SI2392
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 100 V 2A (Ta), 2.3A (Tc) 1.25W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)