Vishay Siliconix IRFBE30PBF-BE3

MOSFET N-CH 800V 4.1A TO220AB

Manufacturer: Vishay Siliconix
Manufacturer's number: Vishay Siliconix IRFBE30PBF-BE3
Package: Tube
Datasheet: PDF
Stock: 2
SKU: IRFBE30PBF-BE3
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Unit Price: $2.2500

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Details

Parameters
Mfr	Vishay Siliconix
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	IRFBE30
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	742-IRFBE30PBF-BE3
Standard Package	50

N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB