Vishay General Semiconductor - Diodes Division VS-40MT120PHAPBF

MTP - HALF BRIDGE IGBT

Manufacturer: Vishay General Semiconductor - Diodes Division
Manufacturer's number: Vishay General Semiconductor - Diodes Division VS-40MT120PHAPBF
Package: Tube
Datasheet: PDF
Stock: 104
SKU: VS-40MT120PHAPBF
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Unit Price: $63.7700

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Details

Parameters
Power - Max	305 W
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 40A
Current - Collector Cutoff (Max)	50 µA
Input Capacitance (Cies) @ Vce	3.2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	12-MTP Module
Supplier Device Package	12-MTP
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	112-VS-40MT120PHAPBF
Standard Package	15
Mfr	Vishay General Semiconductor - Diodes Division
Series	-
Package	Tube
Product Status	Active
IGBT Type	Trench Field Stop
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	75 A

IGBT Module Trench Field Stop Half Bridge 1200 V 75 A 305 W Through Hole 12-MTP