Transphorm TP65H480G4JSG-TR

GANFET N-CH 650V 3.6A 3PQFN

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Unit Price: $3.9800

Ext Price: $3.9800

Details

N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)

Parameters
Mfr	Transphorm
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V
Rds On (Max) @ Id, Vgs	560mOhm @ 3.4A, 8V
Vgs(th) (Max) @ Id	2.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	13.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (5x6)
Package / Case	3-SMD, Flat Lead
Base Product Number	TP65H480
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H480G4JSG-TR
Standard Package	4,000