Transphorm TP65H070LDG-TR

650 V 25 A GAN FET

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Unit Price: $13.1200

Ext Price: $13.1200

Details

N-Channel 650 V 25A (Tc) 96W (Tc) Surface Mount 3-PQFN (8x8)

Parameters
HTSUS	8541.29.0095
Standard Package	500
Mfr	Transphorm
Series	TP65H070L
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	9.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99