Transphorm TP65H035G4WS

GANFET N-CH 650V 46.5A TO247-3

Manufacturer: Transphorm
Manufacturer's number: Transphorm TP65H035G4WS
Package: Tube
Datasheet: PDF
Stock: 533
SKU: TP65H035G4WS
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Unit Price: $18.6500

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Details

Parameters
Mfr	Transphorm
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 0 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	-55°C ~ 150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	TP65H035
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1707-TP65H035G4WS
Standard Package	30

N-Channel 650 V 46.5A (Tc) 156W (Tc) Through Hole TO-247-3