Parameters |
Mfr |
Microchip Technology |
Series |
POWER MOS 8™ |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
700mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id |
5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs |
260 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
8370 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
1040W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-264 [L] |
Package / Case |
TO-264-3, TO-264AA |
Base Product Number |
APT22F120 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
N-Channel 1200 V 23A (Tc) 1040W (Tc) Through Hole TO-264 [L]