Toshiba Semiconductor and Storage XPQ1R004PB,LXHQ

40V U-MOS IX-H L-TOGL 1.0MOHM

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage XPQ1R004PB,LXHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: XPQ1R004PB,LXHQ
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Unit Price: $3.0000

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	84 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6890 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	L-TOGL™
Package / Case	8-PowerBSFN
Base Product Number	XPQ1R004
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,500

N-Channel 40 V 200A (Ta) 230W (Tc) Surface Mount L-TOGL™