Toshiba Semiconductor and Storage XPN12006NC,L1XHQ

MOSFET N-CH 60V 20A 8TSON

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage XPN12006NC,L1XHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: XPN12006NC,L1XHQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	20A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 10 V
Power Dissipation (Max)	65W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance-WF (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	XPN12006
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 60 V 20A 65W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)