Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ

MOSFET N-CH 60V 110A 8SOP

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage XPH2R106NC,L1XHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9
SKU: XPH2R106NC,L1XHQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	Automotive, AEC-Q101, U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	110A (Ta)
Rds On (Max) @ Id, Vgs	2.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-SOIC (0.197", 5.00mm Width)
Base Product Number	XPH2R106
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 60 V 110A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)