Toshiba Semiconductor and Storage XK1R9F10QB,LXGQ

MOSFET N-CH 100V 160A TO220SM

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage XK1R9F10QB,LXGQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3855
SKU: XK1R9F10QB,LXGQ
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Unit Price: $3.9000

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.92mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	184 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11500 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	XK1R9F10
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)