Toshiba Semiconductor and Storage TW070J120B,S1Q

SICFET N-CH 1200V 36A TO3P

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TW070J120B,S1Q
Package: Tube
Datasheet: PDF
Stock: 104
SKU: TW070J120B,S1Q
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Unit Price: $32.4200

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id	5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Vgs (Max)	±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	272W (Tc)
Operating Temperature	-55°C ~ 175°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TW070J120
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TW070J120BS1Q
Standard Package	25

N-Channel 1200 V 36A (Tc) 272W (Tc) Through Hole TO-3P(N)