Toshiba Semiconductor and Storage TRS4E65F,S1Q

DIODE SIL CARB 650V 4A TO220-2L

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TRS4E65F,S1Q
Package: Tube
Datasheet: -
Stock: 174
SKU: TRS4E65F,S1Q
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Unit Price: $2.3700

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	20 µA @ 650 V
Capacitance @ Vr, F	16pF @ 650V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C (Max)
Base Product Number	TRS4E65
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	50

Diode 650 V 4A Through Hole TO-220-2L