Toshiba Semiconductor and Storage TRS12N65FB,S1Q

SIC SBD TO-247 V=650 IF=12A

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TRS12N65FB,S1Q
Package: Tube
Datasheet: -
Stock: 55
SKU: TRS12N65FB,S1Q
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Unit Price: $4.9600

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
Product Status	Active
Diode Configuration	1 Pair Common Cathode
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io) (per Diode)	6A (DC)
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Operating Temperature - Junction	175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Base Product Number	TRS12N65
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	264-TRS12N65FBS1Q
Standard Package	30

Diode Array 1 Pair Common Cathode 650 V 6A (DC) Through Hole TO-247-3