Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ

MOSFET N-CH 40V 120A 8SOP

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9
SKU: TPH1R104PB,L1XHQ
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Details

Parameters
Current - Continuous Drain (Id) @ 25°C	120A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.14mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4560 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 132W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-SOIC (0.197", 5.00mm Width)
Base Product Number	TPH1R104
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	5,000
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V

N-Channel 40 V 120A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)