Parameters | |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVI |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 18mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 44.6 nC @ 10 V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | PS-8 |
Package / Case | 8-SMD, Flat Lead |
Base Product Number | TPCP8107 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 3,000 |