Toshiba Semiconductor and Storage TK40J20D,S1F(O

MOSFET N-CH 200V 40A TO3P

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK40J20D,S1F(O
Package: Tray
Datasheet: -
Stock: 1415
SKU: TK40J20D,S1F(O
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Details

Parameters
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TK40J20DS1F(O
Standard Package	100
Mfr	Toshiba Semiconductor and Storage
Series	π-MOSVIII
Package	Tray
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	44mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	260W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TK40J20
Moisture Sensitivity Level (MSL)	1 (Unlimited)

N-Channel 200 V 40A (Ta) 260W (Tc) Through Hole TO-3P(N)