Toshiba Semiconductor and Storage TK2R4E08QM,S1X

UMOS10 TO-220AB 80V 2.4MOHM

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK2R4E08QM,S1X
Package: Tube
Datasheet: PDF
Stock: 196
SKU: TK2R4E08QM,S1X
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Unit Price: $3.1800

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSX-H
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.44mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 2.2mA
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 80 V 120A (Tc) 300W (Tc) Through Hole TO-220