Toshiba Semiconductor and Storage TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK155A65Z,S4X
Package: Tube
Datasheet: PDF
Stock: 2185
SKU: TK155A65Z,S4X
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	155mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 730µA
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1635 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK155A65
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 650 V 18A (Ta) 40W (Tc) Through Hole TO-220SIS