Toshiba Semiconductor and Storage TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK12J60W,S1VE(S
Package: Tray
Datasheet: -
Stock: 3123
SKU: TK12J60W,S1VE(S
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id	3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3
Base Product Number	TK12J60
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-TK12J60WS1VE(S
Standard Package	25

N-Channel 600 V 11.5A (Ta) 110W (Tc) Through Hole TO-3P(N)