Toshiba Semiconductor and Storage TK090A65Z,S4X

MOSFET N-CH 650V 30A TO220SIS

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK090A65Z,S4X
Package: Tube
Datasheet: PDF
Stock: 2
SKU: TK090A65Z,S4X
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Details

Parameters
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	45W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK090A65
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSVI
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 1.27mA

N-Channel 650 V 30A (Ta) 45W (Tc) Through Hole TO-220SIS