Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ

MOSFET P-CH 40V 200A TO220SM

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TJ200F04M3L,LXHQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9779
SKU: TJ200F04M3L,LXHQ
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	460 nC @ 10 V
Vgs (Max)	+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds	1280 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	TJ200F04
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	1,000

P-Channel 40 V 200A (Ta) 375W (Tc) Surface Mount TO-220SM(W)