Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
Rds On (Max) @ Id, Vgs |
30.1mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
16.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1030pF @ 10V |
Power - Max |
1.4W (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
6-TSOP-F |
Base Product Number |
SSM6P816 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
Mosfet Array 20V 6A (Ta) 1.4W (Ta) Surface Mount 6-TSOP-F