Parameters |
Mfr |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Dual) Common Drain |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
8A |
Rds On (Max) @ Id, Vgs |
5.1mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
- |
Power - Max |
- |
Operating Temperature |
- |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, No Lead |
Supplier Device Package |
6-TCSPA (2.14x1.67) |
Base Product Number |
SSM6N951 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
10,000 |
Mosfet Array 12V 8A Surface Mount 6-TCSPA (2.14x1.67)