Toshiba Semiconductor and Storage SSM3J66MFV,L3XHF

AUTO AEC-Q SS MOS P-CH LOW VOLTA

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage SSM3J66MFV,L3XHF
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 14
SKU: SSM3J66MFV,L3XHF
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.6 nC @ 4.5 V
Vgs (Max)	+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	8,000

P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM