Toshiba Semiconductor and Storage GT30J341,Q

IGBT TRANS 600V 30A TO3PN

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage GT30J341,Q
Package: Tray
Datasheet: PDF
Stock: 100
SKU: GT30J341,Q
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Unit Price: $3.4000

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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	59 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Power - Max	230 W
Switching Energy	800µJ (on), 600µJ (off)
Input Type	Standard
Td (on/off) @ 25°C	80ns/280ns
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Base Product Number	GT30J341
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-GT30J341Q
Standard Package	100

IGBT 600 V 59 A 230 W Through Hole TO-3P(N)