Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
Technology |
SiC (Silicon Carbide) Schottky |
Voltage - DC Reverse (Vr) (Max) |
1200 V |
Current - Average Rectified (Io) |
43A |
Voltage - Forward (Vf) (Max) @ If |
1.8 V @ 10 A |
Speed |
No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) |
0 ns |
Current - Reverse Leakage @ Vr |
200 µA @ 1200 V |
Capacitance @ Vr, F |
630pF @ 1V, 1MHz |
Mounting Type |
Through Hole |
Package / Case |
TO-247-2 |
Supplier Device Package |
TO-247 |
Operating Temperature - Junction |
-55°C ~ 175°C |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.10.0080 |
Standard Package |
30 |
Diode 1200 V 43A Through Hole TO-247