Parameters |
Mfr |
Texas Instruments |
Series |
NexFET™ |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
25 V |
Current - Continuous Drain (Id) @ 25°C |
33A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
3V, 8V |
Rds On (Max) @ Id, Vgs |
2mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id |
1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
25 nC @ 4.5 V |
Vgs (Max) |
+10V, -8V |
Input Capacitance (Ciss) (Max) @ Vds |
4000 pF @ 12.5 V |
FET Feature |
- |
Power Dissipation (Max) |
3.1W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-VSON-CLIP (5x6) |
Package / Case |
8-PowerTDFN |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-CSD16325Q5-296 |
Standard Package |
319 |
N-Channel 25 V 33A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)